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簡(jiǎn)要描述：HgCdTe（MCT）多通道檢測(cè)模塊提供針對(duì)不同波長的四象限和多元線陣探測(cè)器模塊，基于HgCdTe材料，集成了跨阻抗、直流耦合四通道前置放大器、TE制冷和風(fēng)扇。
產(chǎn)品型號(hào)：廠商性質(zhì)：代理商更新時(shí)間：2024-10-09訪 問 量：1933產(chǎn)品分類CLASSIFICATION
詳細(xì)介紹
| 品牌 | 其他品牌 | 價(jià)格區(qū)間 | 面議 |
|---|---|---|---|
| 產(chǎn)地類別 | 國產(chǎn) | 應(yīng)用領(lǐng)域 | 環(huán)保,化工 |
HgCdTe（MCT）多通道檢測(cè)模塊
VIGO Photonics 提供針對(duì)不同波長的四象限和多元線陣探測(cè)器模塊，基于HgCdTe材料，集成了跨阻抗、直流耦合四通道前置放大器、TE制冷和風(fēng)扇。四象限模塊適合用于測(cè)量光束的移動(dòng)或作為對(duì)準(zhǔn)系統(tǒng)的反饋；多元線陣探測(cè)器多用于非接觸式的溫度測(cè)量，常用于鐵路運(yùn)輸。除標(biāo)準(zhǔn)5μm和10.6μm模塊，根據(jù)不同應(yīng)場(chǎng)景，可接受定制。
1、QM-5，四象限，制冷模塊，光敏面4×(0.2×0.2)
| Specification (Ta = 20°C) | |
| Parameter | Typical value |
| Optical characteristics | |
| Cut-on wavelength λcut-on (10%), µm | 3.5±0.5 |
| Peak wavelength λpeak, µm | 4.5±0.5 |
| Optimum wavelength λopt, µm | 5 |
| Cut-off wavelength λcut-off (10%), µm | 6.0±0.5 |
| Detectivity D*(λpeak), cm·Hz1/2/W | ≥7.0×109 |
| Detectivity D*(λopt), cm·Hz1/2/W | ≥6.8×109 |
| Output noise density vn(100 kHz), nV/Hz1/2 | ≤500 |
| Electrical parameters | |
| Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W | ≥1.7×105 |
| Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W | ≥1.6×105 |
| Low cut-off frequency flo, Hz | DC |
| High cut-off frequency fhi, Hz | ≥1M |
| Output impedance Rout, Ω | 50 |
| Output voltage swing Vout (RL = 1 MΩ*)), V | 0 – 4 |
| Output voltage offset Voff, mV | max ±20 |
| Power supply voltage Vsup, VDC | 7.5 |
| Power consumption, W | max 6 |
| Other information | |
| Active elements material | epitaxial HgCdTe heterostructure |
| Active areas A, mm×mm | 4×(0.2×0.2) |
| Distance between active elements, mm | 0.02 |
| Window | pSiAR |
| Acceptance angle Φ | ~70° |
| Ambient operating temperature Ta, °C | 10 to 30 |
| Signal output sockets | 4×MCX |
| Power supply socket | DC 2.1/5.5 |
| Mounting hole | M4 |
| Fan | yes |
2、QM-10.6，四象限，非制冷模塊，光敏面4×(1×1)
| Specification (Ta = 20°C) | |
| Parameter | Typical value |
| Optical characteristics | |
| Cut-on wavelength λcut-on (10%), µm | 3.0±1.0 |
| Peak wavelength λpeak, µm | 8.0±2.0 |
| Optimum wavelength λopt, µm | 10.6 |
| Cut-off wavelength λcut-off (10%), µm | 12.0±1.0 |
| Detectivity D*(λpeak), cm·Hz1/2/W | ≥1.0×107 |
| Detectivity D*(λopt), cm·Hz1/2/W | ≥4.5×106 |
| Output noise density vn(100 kHz) µV/Hz1/2 | ≤4.5 |
| Electrical parameters | |
| Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W | ≥2.2×102 |
| Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W | ≥1.1×102 |
| Low cut-off frequency flo, Hz | DC |
| High cut-off frequency fhi, Hz | ≥1M |
| Output impedance Rout, Ω | 50 |
| Output voltage swing Vout(RL = 1 MΩ*)), V | 0 – 4 |
| Output voltage offset Voff, mV | max ±20 |
| Power supply voltage Vsup, VDC | 7.5 |
| Power consumption, W | max 6 |
| Other information | |
| Active elements material | epitaxial HgCdTe heterostructure |
| Active areas A, mm×mm | 4×(1×1) |
| Distance between active elements, mm | 0.15±0.1 |
| Window | none |
| Acceptance angle Φ | ~70° |
| Ambient operating temperature Ta, °C | 10 to 30 |
| Signal output sockets | 4×MCX |
| Power supply socket | DC 2.1/5.5 |
| Mounting hole | M4 |
| Fan | yes |
1、4EM-5，1×4線陣，制冷模塊，光敏面4×(0.2×0.2)
| Specification (Ta = 20°C) | |
| Parameter | Typical value |
| Optical characteristics | |
| Cut-on wavelength λcut-on (10%), µm | 3.5±0.5 |
| Peak wavelength λpeak, µm | 4.5±0.5 |
| Optimum wavelength λopt, µm | 5 |
| Cut-off wavelength λcut-off (10%), µm | 6.0±0.5 |
| Detectivity D*(λpeak), cm·Hz1/2/W | ≥7.0×109 |
| Detectivity D*(λopt), cm·Hz1/2/W | ≥6.8×109 |
| Output noise density vn(100 kHz), nV/Hz1/2 | ≤500 |
| Electrical parameters | |
| Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W | ≥1.7×105 |
| Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W | ≥1.6×105 |
| Low cut-off frequency flo, Hz | DC |
| High cut-off frequency fhi, Hz | ≥1M |
| Output impedance Rout, Ω | 50 |
| Output voltage swing Vout (RL = 1 MΩ*)), V | 0 – 4 |
| Output voltage offset Voff, mV | max ±20 |
| Power supply voltage Vsup, VDC | 7.5 |
| Power consumption, W | max 6 |
| Other information | |
| Active elements material | epitaxial HgCdTe heterostructure |
| Active areas A, mm×mm | 4×(0.2×0.2) |
| Distance between active elements, mm | 0.05 |
| Window | pSiAR |
| Acceptance angle Φ | ~70° |
| Ambient operating temperature Ta, °C | 10 to 30 |
| Signal output sockets | 4×MCX |
| Power supply socket | DC 2.1/5.5 |
| Mounting hole | M4 |
| Fan | yes |
2、4EM-5，1×32線陣，制冷模塊，光敏面4×(0.2×0.2)
| Specification (Ta = 20°C, Vb = 0 mV) | Detection module type | |
| Parameter | ||
| 32EM-5-01 | 32EM-5-02 | |
| Optical characteristics | ||
| Cut-on wavelength λcut-on (10%), µm | ≤2.0 | 3.7±0.2 |
| Peak wavelength λpeak, µm | 4.25±0.2 | 4.75±0.2 |
| Optimal wavelength λopt, µm | 5 | 5 |
| Cut-off wavelength λcut-off (10%), µm | 5.6±0.2 | 5.8±0.2 |
| Detectivity D*(λpeak), cm·Hz1/2/W | ≥3.5×109 | ≥2.4×109 |
| Detectivity D*(λopt), cm·Hz1/2/W | ≥2.2×109 | ≥2.2×109 |
| Electrical parameters | ||
| Voltage responsivity Rv(λpeak, RLoad = 1 MΩ), V/W | ≥3.5×104 | ≥5.0×104 |
| Voltage responsivity Rv(λopt, RLoad = 1 MΩ), V/W | ≥2.2×104 | ≥4.6×104 |
| Low cut-off frequency flo, Hz | DC | DC |
| High cut-off frequency fhi, kHz | ≥400 | ≥650 |
| Output impedance Rout, Ω | 50 | 50 |
| Output voltage swing Vout (RLoad = 1 MΩ), V | -1 (negative output) | -1 (negative output) |
| Output voltage offset Voff, mVDC | max -200 | max -200 |
| Power supply voltage Vsup, VDC | 5 | 5 |
| Other information | ||
| Active elements material | epitaxial HgCdTe heterostructure | |
| Number of elements | 1×32 linear array | |
| Active area of single element A, mm×mm | 0.125×1 | 0.1×0.1 |
| Distance between active elements, µm | 25 | 50 |
| Window | pAl2O3AR | |
| Acceptance angle Φ | ~70° | |
| Ambient operating temperature Ta, °C | 10 to 30 | |
CO2激光（10.6µm）測(cè)量
激光功率監(jiān)控，激光束輪廓和定位
激光校準(zhǔn)
光譜學(xué)（氣體檢測(cè)，呼吸分析）
慢速和快速非接觸式溫度測(cè)量（鐵路運(yùn)輸、工業(yè)和實(shí)驗(yàn)室過程監(jiān)控）
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